Device Electromagnetic Characterization of GaAs MESFET Transistor

Amri Houda, and Zaabat Mour

Abstract

In this paper, an electromagnetic study of MESFET transistor based on iterative method is presented. This method is generating the relationship between the incident and reflected waves from the planar circuits. The WCIP method is developed from the fast modal transform algorithm

Relevant Publications in Research & Reviews: Journal of Pure and Applied Physics