Effect of Ionizing Radiation on Optical Properties Hydrogenated Amorphous Silicon thin film Alloy Si

Short Communication

Najafov BA, Isakov GI and Abas


Analyzed by optical properties of hydrogenated amorphous silicon thin films a-Si:H. Optical band gap width and other settings for the а-nk-Si:H and its alloys depend not only on the content of hydrogen, but also on other parameters: substrate temperature, sedimentation rate, annealing temperature, composition, hydrogen partial pressure and the structure of the films. For amorphous and nano crystalline alloys and-nk-Si: H.

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