Research Article
A. Bahari , Z. Naimi and M. Am
Abstract
When a transistor is shrunk, all of its parts must be shrunk. When gate oxide is very slim, the current tunnelling to gate increases exponentially. The other problem in the current CMOS (Complementary Metal Oxide Semiconductor) transistor is the length of channel respect the Fermi wavelength. To make better and faster CPUs and logical device we need to use more transistors in an small area which have been faced with many challenges issues and problems due to tunnelling current and boron diffusion though the ultra thin silicon oxide film. Due to the importance of high current operations of electronic devices, Single Walled (SW) CNT has been considered as a one dimension (1D) structure and the strong covalent carbon-carbon bonding configuration. We have thus studied the electrical transport properties in a CNT as a channel of Carbon Nano Tube Field Effect Transistor (CNTFET) and simulated electron transport in a CNTFET by solving Boltezman equation to obtain distribution function in the SWCNT channel, including the development of high-κ gate dielectric integration, chemical functionalization for conformal dielectric deposition and pushing the performance limit of nanotube FETs by channel length scaling. The obtained simulations results show that in terms of ON state current density SWCNT can be choice as a wire for electron transportation compatibility with high-κ gate dielectrics. Our results show that system takes a stationary state after passing a time around 10- 13 s.