Research Article
Y. R. Toda, K. S. Chaudhari, A
Abstract
Thin films having different thickness of InSb were deposited by thermal evaporation techniques, onto precleaned amorphous glass substrate. The surface morphological properties of films were evaluated by XRD, Scanning Electron Microscope (SEM), EDAX, Transmission Electron Microscopy (TEM) and optical microscopy. The electrical transport properties of annealed thin films have been evaluated. Thermo Electrical parameters such as Fermi energy (0.11478 to 0.0.9159 eV), absorption coefficient (0.37454 to 10.58) has been estimated. The X-ray diffraction analysis confirms that films are polycrystalline having cubic structure cell. The grain size is found to be 11.32 nm.