Research Article
K.S.Chaudhari, Y. R. Toda, A.
Abstract
InSe thin films were prepared on glass substrate by vacuum evaporation technique at a pressure of 10-5 torr. The thermo electric properties of the films was determined over the thickness range of 1000 Ǻ, 1500 Ǻ, 2000 Ǻ, 2500 Ǻ and 3000 Ǻ. Thermo electric properties shows a positive sign exhibiting P- type semiconductig nature of films. Fermi energy and absorption coefficient were determined. The estimated values of Fermi energy and absorption coefficient are 0.089 to 1.23 eV and 1.43 to 1.94 respectively. The XRD analysis confirms that the deposited films are polycrystalline having cubic structure.