Variation of properties of films during growth in a vertical reactor for gas phase epitaxy with variation of parameters of technological process with account native convection

E.L.Pankratov, E.A.Bulaeva

Abstract

In this paper we analyzed mass and heat transport during growth films in a vertical reactors for gas phase epitaxy with account native convection by using recently introduced analytical approach for prognosis of the above processes. Native convection takes a significant influence on growth of films at high temperature. We determine several conditions to increase homogeneity of epitaxial layers with varying parameters of technological process.